ÿþ<html> <META NAME="GOOGLEBOT" CONTENT="NOARCHIVE"> <META NAME="ROBOTS" CONTENT="NOARCHIVE"> <head> <META NAME="GOOGLEBOT" CONTENT="NOARCHIVE"> <META NAME="ROBOTS" CONTENT="NOARCHIVE"> <title>Academics</title> <style type="text/css"> #content { position: absolute; top: 10px; left: 10px; width: 600px; padding: 5px; border-color: #97BF99; border-style: solid; border-width: 0px; text-align: justify; font-family: verdana; font-size: 12px; color: #ffffff; } </style> </head> <body bgcolor="#000000" text="#FFFFFF"> <div id="content" align="left" bgcolor="black"> <center> <A HREF="http://www.ertosun.com"><IMG STYLE="border: none;" SRC="top.gif" ALT="Main Page"></A> </center> <br><br><br><br><br> <img src="MGE5.jpg"> <br> <img src="Photography/Aboutme.JPG"> <br> <br> M. Günhan Ertosun is a PhD candidate at Electrical Engineering Department of Stanford University, in Saraswat Research Group. <br> <br> UPDATE: I succesfully defended my PhD thesis on Friday, May 14, 2010. <br> I am a PhD candidate, no more! <br> <br><br><br><br><br> <br><br> <br><br> <img src="Photography/Publications.JPG"> <br> <ul> <li> <u>M. Günhan Ertosun</u>, H. Atli, H. M. Ozaktas, and B. Barshan. ``Complex signal recovery from fractional Fourier transform intensities, In IEEE 12th Signal Processing and Communications Applications Conference, pages 308 311. IEEE, New Jersey, 2004. </li> <br> <li> <u>M. Günhan Ertosun</u>, H. Atli, H. M. Ozaktas and B. Barshan, ``Complex signal recovery from two fractional Fourier transform intensities: order and noise dependence,'' Optics Communications, vol.244, no.1-6, pp.61-70, January 2005. </li> <br> <li> <u>M. Günhan Ertosun</u>, H. Atli, H. M. Ozaktas and B. Barshan, ``Complex signal recovery from multiple fractional Fourier transform intensities, Applied Optics, vol.44, no.23, pp.4902-4908, August 2005. </li> <br> <li> J. L. Johnson, A. Behnam, Y. Choi, L. Noriega, <u>M. Günhan Ertosun</u>, Z. Wu, A.G. Rinzler, P.Kapur, K. C. Saraswat, and A. Ural,  Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts MRS (Materials Research Society) Fall Meeting, Nov 2007. </li> <br> <li> A. Behnam, J. L. Johnson, Y. Choi, <u>M. Günhan Ertosun</u>, Z. Wu, A.G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural,  Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-Silicon Schottky Contacts , SPIE Photonics West Conference, January 2008. </li> <br> <li> A Behnam , J. Johnson , Y. Choi , L. Noriega , <u>M. Günhan Ertosun</u> , Z. Wu , A. Rinzler , P. Kapur , K. C. Saraswat , A.Ural,  Metal-Semiconductor-Metal (MSM) Photodetectors with Single-walled Carbon Nanotube Film Schottky Electrodes on GaAs 2008 American Physical Society (APS) March Meeting, New Orleans, LA, March 2008 </li> <br> <li> A. Behnam, J. L. Johnson, Y. Choi, L. Noriega, <u>M. Günhan Ertosun</u>, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural,  Metal-Semiconductor-Metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts Journal of Applied Physics, Volume 103, Issue 11, June 2008 </li> <br> <li> A. Behnam, J. L. Johnson, Y.Choi, <u>M. Günhan Ertosun</u>, A. K. Okyay, P. Kapur, K. C. Saraswat, and A. Ural, "Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures," Applied Physics Letters, Volume 92, Issue 24, June 2008 </li> <br> <li> <u>M. Günhan Ertosun</u>, H. Cho, P. Kapur, K. C. Saraswat;  A Nanoscale Vertical Double-Gate Single-Transistor Capacitorless DRAM IEEE Electron Device Letters, Volume 29, Issue 6, June 2008 </li> <br> <li> <u>M. Günhan Ertosun</u>,P. Kapur, K. C. Saraswat;  A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM IEEE Electron Device Letters, Volume 29, Issue 12, December 2008 </li> <br> <li> Krishna Saraswat, <u>M. Günhan Ertosun</u>, D. Kim, T. Krishnamohan, P. McIntyre, Y. Nishi, A. Okyay, J. Park, H. Yu; "Ge MOSFETs and Single Transistor DRAM" 6th International Symposium on Advanced Gate Stack Technology, August 2009 (<b>Invited</b>) <br> <br> <li> <u>M. Günhan Ertosun</u>, K. C. Saraswat;  Characteristics Of The Capacitorless Double Gate Quantum Well Single Transistor DRAM IEEE International Conference on Simulation of Semiconductor Process and Devices 2009, September 2009 </li> <br> <li><u>M. Günhan Ertosun</u>;  Novel Memory Devices: Capacitorless Quantum Well 1T DRAM , Semiconductor Research Corporation (SRC) / The US National Science Foundation (NSF) / The Singapore Agency for Science, Technology and Research (A*STAR) Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures, Singapore, October 2009 (<b>Invited</b>) </li> <br> <li><u>M. Günhan Ertosun</u>;  Novel Single Transistor DRAM Technologies , 5th Emerging Technologies in Solid State Devices Workshop, Baltimore, December 2009 (<b>Invited</b>) <br> <br> <li><u>M. Günhan Ertosun</u>, K. C. Saraswat; "Investigation of Capacitorless Double Gate Single Transistor DRAM: With & Without Quantum Well" IEEE Transactions on Electron Devices, vol.57, no.3, pp.608-613, March 2010 </li> <br> <li><u>M. Günhan Ertosun</u>, K. Lim, C. Park, J. Oh, P. Kirsch, and K.C. Saraswat, "Novel Capacitorless Single Transistor Charge Trap DRAM (1T CT DRAM) Utilizing Electrons" IEEE Electron Device Letters vol.31, no.5, pp.405-407, May 2010 </li> <br> <br><br><br><br><br> <br><br><br><br><br> <br><br><br><br><br> <A HREF="http://www.ertosun.com"><IMG STYLE="border: none;" SRC="Photography/Home.gif" ALT="Main Page"></A> <br><br><br><br><br> <center> <A HREF="http://www.ertosun.com"><IMG STYLE="border: none;" SRC="bottom.gif" ALT="Main Page"></A> </center> </div> </html>